![]() The theory predicted a surface potential amplification upon stabilization of the quasi-static NC, which is quantified by the body factor ‘ m’. ![]() This concept assumed that a quasi-static ( QS) NC can occur in FE based dielectric stacks, and a Landau based formalism was used to predict its existence 1. ![]() The Negative Capacitance (NC) based FET in which the regular gate oxide would be replaced by a ferroelectric (FE) oxide was proposed some time ago to beat this “Boltzmann tyranny” 1. ![]() Breaking this limit has been the topic of intense investigations over the last years as it would allow producing CMOS circuits that consume less power. This leads to a fundamental limit in the steepness of the I-V characteristic in the subthreshold regime, which is 60mV/dec at room temperature. In the non-degenerate limit, the charge carriers in a MOSFET follow the Boltzmann distribution.
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